Temperature Dependence of Neutron Irradiated SiC Schottky Diode

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Avalanche robustness of SiC Schottky diode

Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in th...

متن کامل

Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters

This paper reports on SiC devices operating in a dc-dc buck converter under extremely high ambient temperatures. To this end, the authors packaged SiC JFET and Schottky diodes in thermally stable packages and built a high-temperature inductor. The converter was tested at ambient temperatures up to 400◦C. Although the conduction loss of the SiC JFET increases slightly with increasing temperature...

متن کامل

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation

Temperature-dependent electrical characterization of Pt/n-GaN Schottky barrier diodes prepared by ultra high vacuum evaporation has been done. Analysis has been made to determine the origin of the anomalous temperature dependence of the Schottky barrier height, the ideality factor, and the Richardson constant calculated from the I-V-T characteristics. Variable-temperature Hall effect measuremen...

متن کامل

Temperature Dependence of I-V Characteristics of Au/n-Si Schottky Barrier Diode

The current-voltage characteristics of Au/n-Si Schottky barrier diodes were measured in a wide temperature range of 70-310 K. The forward current-voltage characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and assuming Gaussian distribution (single) of barrier height. Findings are investigated to explore TFE-mechanism with high value of characteristic ene...

متن کامل

Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers

سال: 2014

ISSN: 1226-7945

DOI: 10.4313/jkem.2014.27.10.618